? 2003 ixys all rights reserved ixgn 200n60a2 v ces = 600 v i c25 = 200 a v ce(sat) = 1.35 v sot-227b, minibloc features z international standard package minibloc z aluminium nitride isolation - high power dissipation z isolation voltage 3000 v~ z very high current igbt z low v ce(sat) for minimum on-state conduction losses z mos gate turn-on - drive simplicity z low collector-to-case capacitance (< 50 pf) z low package inductance (< 5 nh) - easy to drive and to protect applications z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switch-mode and resonant-mode power supplies advantages z easy to mount with 2 screws z space savings z high power density e g = gate, c = collector, e = emitter c either emitter terminal can be used as main or kelvin emitter g e c e c c symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c 200 a i c110 t c = 110 c 100 a i cm t c = 25 c, 1 ms 400 a ssoa v ge = 15 v, t vj = 125 c, r g = 2.0 ? i cm = 200 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 700 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 1 ma, v ce = v ge 2.5 5.5 v i ces v ce = v ces t j = 25 c50 a v ge = 0 v t j = 125 c2ma i ges v ce = 0 v, v ge = 20 v 400 na v ce(sat) i c = i c110 , v ge = 15 v 1.2 1.35 v ds99087a(11/03) igbt optimized for switching up to 5 khz preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 sot-227b minibloc symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60 a; v ce = 10 v, 70 106 s pulse test, t 300 s, duty cycle 2 % c ies 9900 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 740 pf c res 190 pf q g 480 nc q ge i c = i c110 , v ge = 15 v, v ce = 0.5 v ces 63 nc q gc 169 nc t d(on) 60 ns t ri 45 ns t d(off) 360 ns t fi 250 ns e off 5mj t d(on) 60 ns t ri 60 ns e on 3.0 mj t d(off) 290 ns t fi 660 ns e off 12 mj r thjc 0.17 k/w r thck 0.05 k/w inductive load, t j = 25 c i c = i c110 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 2.0 ? inductive load, t j = 125 c i c = i c110 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 2.4 ? ixgn 200n60a2
? 2003 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 50 100 150 200 250 300 350 0 0.5 1 1.5 2 2.5 3 3.5 4 v c e - volts i c - amperes v ge = 15v 13v 11v 5v 7v 9v fig. 3. output characteristics @ 125 deg. c 0 25 50 75 100 125 150 175 200 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 1. output characteristics @ 25 deg. c 0 25 50 75 100 125 150 175 200 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 v c e - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalized i c = 100a i c = 50a v ge = 15v i c = 200a fig. 5. collector-to-em itter voltage vs. gate-to-em iiter voltage 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 567891011121314151617 v g e - volts v c e - volts t j = 25oc i c = 200a 100a 50a fig. 6. input adm ittance 0 50 100 150 200 250 300 350 4 4.5 5 5.5 6 6.5 7 7.5 8 v g e - volts i c - amperes t j = 125oc 25oc -40oc ixgn 200n60a2
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 fig. 7. transconductance 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 11. gate charge 0 3 6 9 12 15 0 50 100 150 200 250 300 350 400 450 500 q g - nanocoulombs v g e - volts v ce = 300v i c = 100a i g = 10ma fig. 12. capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 8. dependence of e off on r g 0 5 10 15 20 25 30 35 0 5 10 15 20 25 r g - ohms e off - millijoules i c = 50a t j = 125oc v ge = 15v v ce = 480v i c = 100a i c = 200a fig. 9. dependence of e off on i c 0 5 10 15 20 25 30 50 75 100 125 150 175 200 i c - amperes e off - millijoules r g = 2.4 ? v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 10. dependence of e off on temperature 0 5 10 15 20 25 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules i c = 200a r g = 2.4 ? v ge = 15v v ce = 480v i c = 100a i c = 50a ixgn 200n60a2
? 2003 ixys all rights reserved fig. 13. maximum transient thermal resistance 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) ixgn 200n60a2
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